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| 2SK1807 Silicon N Channel MOS FET Application High speed power switching TO-220AB Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter 12 2 3 1. Gate 2. Drain (Flange) 3. Source 1 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW 10 s, duty cycle 1 % Value at Tc = 25 C Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 900 30 4 10 4 60 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK1807 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 900 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 720 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A VGS = 10 V * ID = 2 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 2 A VGS = 10 V RL = 15 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 3.0 10 250 3.0 4.0 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 1.7 2.7 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 740 305 150 15 60 100 80 0.9 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 4 A, VGS = 0 IF = 4 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 800 -- ns -------------------------------------------------------------------------------------- See characteristic curves of 2SK1340 2SK1807 Power vs. Temperature Derating 80 50 20 10 5 2 1 0.5 0.2 0.1 0.05 Maximum Safe Operation Area 10 Drain Current I D (A) Pch (W) s 60 40 20 10 0 n n) PW s io a is (o t 1 ra are DS m = D pe is y R s 10 C O th b O m pe s in ited (1 ra tio lim Sh n ot (T ) c = 25 C ) Channel Dissipation Ta = 25C 1 3 10 30 100 300 1000 0 50 100 Case Temperature 150 Tc (C) 200 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 0.01 1 shot Pulse 100 1m 10 m Pulse Width PW (S) 100 m ch - c(t) = s(t) . ch - c ch - c = 2.08C / W, Tc = 25C PW D= T P DM T PW Tc = 25C 1.0 1 10 |
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